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          首頁 >IRFL110PBF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRFL110PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive

          文件:1.45555 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFL110PBF

          HEXFET Power MOSFET

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solderin

          文件:216.93 Kbytes 頁數:8 Pages

          IRF

          IRFL110TR

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive

          文件:1.45555 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFL110TRPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive

          文件:1.45555 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRFL110TRPBF

          N-Channel 100-V (D-S) MOSFET

          FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFETs ? 175 °C Maximum Junction Temperature ? Compliant to RoHS Directive 2002/95/EC

          文件:1.46639 Mbytes 頁數:6 Pages

          VBSEMI

          微碧半導體

          詳細參數

          • 型號:

            IRFL110PBF

          • 功能描述:

            MOSFET N-Chan 100V 1.5 Amp

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應商型號品牌批號封裝庫存備注價格
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現貨價秒殺全網
          詢價
          VISHAY
          24+
          SOT-223
          5000
          只做原裝公司現貨
          詢價
          VishayPCS
          4006
          全新原裝 貨期兩周
          詢價
          IR
          24+
          SMD
          5500
          長期供應原裝現貨實單可談
          詢價
          VIS
          23+
          NA
          3941
          專做原裝正品,假一罰百!
          詢價
          IR
          25+23+
          SOT-223
          15032
          絕對原裝正品全新進口深圳現貨
          詢價
          IR
          18+
          SOT-223
          18500
          全新原裝現貨,可出樣品,可開增值稅發(fā)票
          詢價
          Vishay PCS
          2022+
          4002
          全新原裝 貨期兩周
          詢價
          IR
          24+
          SOT-23
          6430
          原裝現貨/歡迎來電咨詢
          詢價
          IR/VISH
          24+
          65230
          詢價
          更多IRFL110PBF供應商 更新時間2026-1-20 11:41:00
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