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    首頁
                >IRF730>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    IRF730B
    N-Channel MOSFET Transistor
    
DESCRIPTION
? Drain Current –ID=5.5A@ TC=25℃
? Drain Source Voltage-
   : VDSS= 400V(Min)
? Static Drain-Source On-Resistance
   : RDS(on) = 1.0Ω (Max)
? Fast Switching Speed
APPLICATIONS
? Designed especially for high voltage,high speed applications,
   such as off-line switching power s
    文件：201.45 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    IRF730B_V01
    D Series Power MOSFET
    
FEATURES
? Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
? Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (
    文件：173.28 Kbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRF730F
    6.0A, 400V, 1.0廓 N-CHANNEL POWER MOSFET
    
DESCRIPTION
? IRF730 is 400V High voltage N-Channel enhancement
   mode power MOS-FET chip fabricated in advanced
   silicon epitaxial planar technology;
? Advanced termination scheme to provide enhanced voltage-blocking capability;
? Avalanche Energy Specified;
? Source-to-Drain Diode Recov
    文件：365.66 Kbytes 頁數(shù)：6 Pages
    FS
    

    IRF730FI
    isc N-Channel MOSFET Transistor
    
DESCRIPTION
? Drain Current –ID=3.5A@ TC=25℃
? Drain Source Voltage-
   : VDSS= 400V(Min)
? Static Drain-Source On-Resistance
   : RDS(on) = 1.0Ω(Max)
? Fast Switching Speed
APPLICATIONS
? Designed especially for high voltage,high speed applications,
   such as off-line switching power su
    文件：65.269 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    IRF730PBF
    Power MOSFET
    
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati
    文件：134.68 Kbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRF730PBF
    Power MOSFET
    
FEATURES
? Dynamic dV/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoH
    文件：156.83 Kbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRF730PBF-BE3
    Power MOSFET
    
FEATURES
? Dynamic dV/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoH
    文件：156.83 Kbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRF730S
    Repetitive Avalanche Rated
    
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi
    文件：173.99 Kbytes 頁數(shù)：9 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRF730S
    Power MOSFET
    
FEATURES
? Surface-mount
? Available in tape and reel
? Dynamic dV/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet
    文件：192.81 Kbytes 頁數(shù)：9 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRF730S
    HEXFET POWER MOSFET
    
DESCRIPTION
Third Generation MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It p
    文件：262.3 Kbytes 頁數(shù)：6 Pages
    IRF
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • PC：
      74
    • ID：
      5.5
    • VDSS：
      400
    • Vth(min)：
      2
    • RDS：
      1.0
    • VGS(RDS)：
      10
    • Package：
      TO-220
    
            
    
        
    
            
    供應(yīng)商型號品牌批號封裝庫存備注價格
    
                
    



    IR
    		

    13+
    		

    TO-220/SOP8
    		

    50000
    		

    勤思達(dá)科技主營IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。
    		
詢價
    

    



    IR
    		

    		

    TO-220
    		

    3200
    		

    專業(yè)分銷全系列產(chǎn)品!絕對原裝正品!量大可訂!價格優(yōu)
    		
詢價
    

    



    SAMSUNG/三星
    		

    25+
    		

    TO220
    		

    32360
    		

    SAMSUNG/三星全新特價IRF730即刻詢購立享優(yōu)惠#長期有貨
    		
詢價
    

    



    APEC
    		

    全新原裝
    		

    TO-220(P)
    		

    5000
    		

    全新原裝 貨期兩周
    		
詢價
    

    



    IR
    		

    24+
    		

    TO-220
    		

    2000
    		

    全新原裝深圳倉庫現(xiàn)貨有單必成
    		
詢價
    

    



    IR
    		

    24+
    		

    TO-220
    		

    9600
    		

    原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
    		
詢價
    

    



    IR
    		

    15+
    		

    TO-220
    		

    14
    		

    原裝正品 可含稅交易
    		
詢價
    

    



    FSC/仙童
    		

    24+
    		

    TO-220
    		

    9200
    		

    絕對原裝現(xiàn)貨,價格低,歡迎詢購!
    		
詢價
    

    



    IR 墨西哥
    		

    13+
    		

    TO-220
    		

    97
    		

    只做原裝正品
    		
詢價
    

    



    IR
    		

    24+
    		

    TO 220
    		

    161266
    		

    明嘉萊只做原裝正品現(xiàn)貨
    		
詢價
    

            
    
        
    
        
    更多IRF730供應(yīng)商
            更新時間2026-1-22 11:04:00
        
    
        
    
          
    
            
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