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          首頁(yè)
                >IRF640>規(guī)格書(shū)列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          IRF640NL
          Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：155.4 Kbytes 頁(yè)數(shù)：11 Pages
          IRF
          

          IRF640NLPBF
          HEXFET? Power MOSFET
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：300.8 Kbytes 頁(yè)數(shù)：12 Pages
          IRF
          

          IRF640NLPBF
          Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：8.24278 Mbytes 頁(yè)數(shù)：11 Pages
          KERSEMI
          

          IRF640NPBF
          Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：8.24278 Mbytes 頁(yè)數(shù)：11 Pages
          KERSEMI
          

          IRF640NPBF
          HEXFET? Power MOSFET
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：300.8 Kbytes 頁(yè)數(shù)：12 Pages
          IRF
          

          IRF640NS
          Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：155.4 Kbytes 頁(yè)數(shù)：11 Pages
          IRF
          

          IRF640NS
          Advanced Process Technology
          
Description
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surfac
          文件：1.19709 Mbytes 頁(yè)數(shù)：11 Pages
          KERSEMI
          

          IRF640NS
          N-Channel Power MOSFETs 200V, 18A, 0.15ohm
          
Features
? Ultra Low On-Resistance
   - rDS(ON) = 0.102? (Typ), VGS = 10V
? Simulation Models
   - Temperature Compensated PSPICE? and SABER?
      Electrical Models
   - Spice and SABER? Thermal Impedance Models
? Peak Current vs Pulse Width Curve
? UIS Rateing Curve
          文件：160.31 Kbytes 頁(yè)數(shù)：11 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          IRF640NSPBF
          Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：8.24278 Mbytes 頁(yè)數(shù)：11 Pages
          KERSEMI
          

          IRF640NSPBF
          HEXFET? Power MOSFET
          
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know
          文件：300.8 Kbytes 頁(yè)數(shù)：12 Pages
          IRF
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Package：
            TO-220AB
          • Ch：
            N
          • VDS (V)：
            200
          • VGS (V)：
            20
          • RDS(on)@10V (?)：
            0.18
          • Qg @10V (nC)：
            70
          • Qgs (nC)：
            13
          • Qgd (nC)：
            39
          • ID Max. (A)：
            18
          • PD Max. (W)：
            125
          • VGS(th) Min. (V)：
            2
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



          		

          25+
          		

          		

          200
          		

          公司現(xiàn)貨庫(kù)存
          		
詢(xún)價(jià)
          

          



          FAIRCHILD
          		

          		

          TO-262
          		

          30216
          		

          提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
          		
詢(xún)價(jià)
          

          



          IR
          		

          24+
          		

          		

          3600
          		

          TO-220
          		
詢(xún)價(jià)
          

          



          IR
          		

          24+
          		

          TO-220
          		

          2000
          		

          全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
          		
詢(xún)價(jià)
          

          



          IR
          		

          23+
          		

          TO-220
          		

          32078
          		

          10年以上分銷(xiāo)商,原裝進(jìn)口件,服務(wù)型企業(yè)
          		
詢(xún)價(jià)
          

          



          IR
          		

          24+
          		

          PTO-220
          		

          1500
          		

          AI芯片,車(chē)規(guī)MCU原裝現(xiàn)貨/為新能源汽車(chē)電子行業(yè)采購(gòu)保駕護(hù)航
          		
詢(xún)價(jià)
          

          



          IR
          		

          24+
          		

          TO 220
          		

          160871
          		

          明嘉萊只做原裝正品現(xiàn)貨
          		
詢(xún)價(jià)
          

          



          IR
          		

          2024+
          		

          N/A
          		

          70000
          		

          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          		
詢(xún)價(jià)
          

          



          Slkor/薩科微
          		

          24+
          		

          TO-220
          		

          50000
          		

          Slkor/薩科微一級(jí)代理,價(jià)格優(yōu)勢(shì)
          		
詢(xún)價(jià)
          

          



          AMD
          		

          24+
          		

          TO-220
          		

          48650
          		

          原裝正品 特價(jià)現(xiàn)貨(香港 新加坡 日本)
          		
詢(xún)價(jià)
          

            
          
        
          
        
          更多IRF640供應(yīng)商
            更新時(shí)間2026-1-17 16:01:00
        
          
        
          
          
          
            
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