首頁 >IRF640NSPBF>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF640NSPBF | HEXFET? Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 頁數(shù)：12 Pages | IRF | IRF | |
IRF640NSPBF | Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 頁數(shù)：11 Pages | KERSEMI | KERSEMI | |
IRF640NSPBF | Advanced Process Technology 文件：341.59 Kbytes 頁數(shù)：11 Pages | IRF | IRF | |
IRF640NSPBF | Advanced Process Technology 文件：341.59 Kbytes 頁數(shù)：11 Pages | IRF | IRF |
詳細參數(shù)
- 型號：
IRF640NSPBF
- 功能描述：
MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-263 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
TO-220 |
15000 |
全新原裝的現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
65400 |
詢價 | |||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
23+ |
TO-263 |
20000 |
原裝正品,假一罰十 |
詢價 | ||
Infineon |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
IR |
17+ |
NA |
9998 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
24+ |
D2PAK |
3800 |
大批量供應優(yōu)勢庫存熱賣 |
詢價 | ||
InfineonTechnologies |
2022+ |
790 |
全新原裝 貨期兩周 |
詢價 |
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