isc N-Channel MOSFET Transistor

DESCRIPTION ? Drain Current –ID= 18A@ TC=25℃ ? Drain Source Voltage- : VDSS= 200V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.18Ω (Max) ? Fast Switching Speed ? Low Drive Requirement APPLICATIONS ? Designed for low voltage, high speed power switching applications such

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ISC

無(wú)錫固電

POWERTR MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ◆ Silicon Gate for Fast Switching Speeds ◆ Low RDS(on) to Minimize On-Losses. Specified at Elevated Temp

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SUNTAC

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.150 ? ■ EXTREMELY HIGH dV/dt CAPABILITY ■ VERY LOW

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STMICROELECTRONICS

意法半導(dǎo)體

N-Channel Power Mosfets

18A, 200V, 0.180 Ohm, N-Channel Power Mosfets These are N-Channel enhansement mode silicon gate power field effect transistors. They are advance power MOSFETs designed, tested, and guaranteed to withstancd a specified level of energy in the breakdown avalanche mode of operation. All of these powe

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ARTSCHIP

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

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KERSEMI

N-Channel Power MOSFET

DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. FEATURES ● RDS(ON) = 0.180? @ VGS = 10V ● Ultra low gate charge(63nC max.) ●

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NELLSEMI

尼爾半導(dǎo)體

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=18A,RDS(ON)

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DOINGTER

杜因特

N - CHANNEL 200V - 0.150W - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET

APPLICATIONS n HIGH CURRENT SWITCHING n UNINTERRUPTIBLE POWER SUPPLY (UPS) n DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

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SYC

Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

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