Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.70972 Mbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：6.75207 Mbytes 頁(yè)數(shù)：7 Pages

KERSEMI

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

文件：95.09 Kbytes 頁(yè)數(shù)：9 Pages

PHI

PHI

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

文件：228.71 Kbytes 頁(yè)數(shù)：10 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：286.91 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY?process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 0.150? ■ EXTREMELY HIGH dv/dt CAPABILITY ■

文件：84.23 Kbytes 頁(yè)數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：2.11507 Mbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Surface mount ? Low-profile through-hole ? Available in tape and reel ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? Fully avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datas

文件：237.05 Kbytes 頁(yè)數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Surface mount ? Low-profile through-hole ? Available in tape and reel ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? Fully avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datas

文件：237.05 Kbytes 頁(yè)數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：2.11507 Mbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司