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          首頁 >IRF640>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF640L

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

          文件:2.11507 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF640L

          Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

          文件:228.71 Kbytes 頁數(shù):10 Pages

          IRF

          IRF640LPBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

          文件:2.11507 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF640N

          Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

          文件:155.4 Kbytes 頁數(shù):11 Pages

          IRF

          IRF640N

          N-Channel Power MOSFETs 200V, 18A, 0.15ohm

          Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

          文件:160.31 Kbytes 頁數(shù):11 Pages

          FAIRCHILD

          仙童半導體

          IRF640N

          N-Channel MOSFET Transistor

          ? DESCRITION ? Efficient and reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤150m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and re

          文件:201.95 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF640N

          Advanced Process Technology

          Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

          文件:1.19709 Mbytes 頁數(shù):11 Pages

          KERSEMI

          IRF640NL

          Advanced Process Technology

          Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

          文件:1.19709 Mbytes 頁數(shù):11 Pages

          KERSEMI

          IRF640NL

          Isc N-Channel MOSFET Transistor

          ? FEATURES ? With TO-262 packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching applic

          文件:288.63 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF640NL

          N-Channel Power MOSFETs 200V, 18A, 0.15ohm

          Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

          文件:160.31 Kbytes 頁數(shù):11 Pages

          FAIRCHILD

          仙童半導體

          技術參數(shù)

          • Package:

            TO-220AB

          • Ch:

            N

          • VDS (V):

            200

          • VGS (V):

            20

          • RDS(on)@10V (?):

            0.18

          • Qg @10V (nC):

            70

          • Qgs (nC):

            13

          • Qgd (nC):

            39

          • ID Max. (A):

            18

          • PD Max. (W):

            125

          • VGS(th) Min. (V):

            2

          供應商型號品牌批號封裝庫存備注價格
          25+
          200
          公司現(xiàn)貨庫存
          詢價
          FAIRCHILD
          TO-262
          30216
          提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
          詢價
          IR
          24+
          3600
          TO-220
          詢價
          IR
          24+
          TO-220
          2000
          全新原裝深圳倉庫現(xiàn)貨有單必成
          詢價
          IR
          23+
          TO-220
          32078
          10年以上分銷商,原裝進口件,服務型企業(yè)
          詢價
          IR
          24+
          PTO-220
          1500
          AI芯片,車規(guī)MCU原裝現(xiàn)貨/為新能源汽車電子行業(yè)采購保駕護航
          詢價
          IR
          24+
          TO 220
          160871
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          Slkor/薩科微
          24+
          TO-220
          50000
          Slkor/薩科微一級代理,價格優(yōu)勢
          詢價
          AMD
          24+
          TO-220
          48650
          原裝正品 特價現(xiàn)貨(香港 新加坡 日本)
          詢價
          更多IRF640供應商 更新時間2026-1-17 16:01:00
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