18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：132.2 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：916.61 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

文件：140.72 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

文件：95.09 Kbytes 頁數(shù)：9 Pages

PHI

PHI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.70972 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement Mode POWER MOSFET

Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)

文件：994.62 Kbytes 頁數(shù)：6 Pages

WEITRON

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telecom, industrial and lighting equipment. Compliance to RoHS.

文件：106.61 Kbytes 頁數(shù)：3 Pages

COMSET

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Description Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

文件：206.36 Kbytes 頁數(shù)：2 Pages

DCCOM

道全

18A 200V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ◆ Silicon Gate for Fast Switching Speeds ◆ Low RDS(on) to Minimize On-Losses. Specified at Elevated Temp

文件：158.63 Kbytes 頁數(shù)：5 Pages

FCI

富加宜

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred all commercial-industrial applications at power dissipat

文件：178.22 Kbytes 頁數(shù)：6 Pages

IRF