N-channel mosfet transistor

? Features · With TO-220F package · Low on-stateand thermal resistance · Fast switching · VDSS=200V; RDS(ON)≤0.4Ω;ID=9A · 1.gate 2.drain 3.source

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isc N-Channel MOSFET Transistor

? DESCRITION ? Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. ? FEATURES ? RDS(on) =0.4Ω ? 6A and 200V ? single pulse avalanche energy rated ? SOA is Power- Dissipation Limited ? Linear Transfer

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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.25 ? ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 °C ■ APPLICATION ORIENTED CHARACHTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CO

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STMICROELECTRONICS

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N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. General features ■ Extremely high dv/dt capability ■ Very low intrinsic

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STMICROELECTRONICS

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N-channel 200V - 0.35廓 - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET

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STMICROELECTRONICS

意法半導體