Advanced Power MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 250V ? Lower RDS(ON): 0.327?(Typ.)

文件：224.02 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.54151 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

Description Third International Rectifier from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of Paralleli

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IRF

N-channel mosfet transistor

Features ? With TO-220 package ? Simple drive requirements ? Fast switching ? VDSS=250V; RDS(ON)≤0.45Ω ;ID=8.1A ? 1.gate 2.drain 3.source

文件：128.43 Kbytes 頁數(shù)：1 Pages

ISC

無錫固電

N-Channel MOSFET Transistor

DESCRIPTION ? Drain Current-ID=8.1A@ TC=25°C ? Drain SourceVoltage- : VDSS= 250V(Min) ? Static Drain-SourceOn-Resistance : RDS(OD = 0.45 Ω(Max) ? Fast Switching Speed ? Low Drive Requirement APPLICATIONS ? High current, high speedswitching ? Switch mode power supplies ? DC-DC conv

文件：71.61 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：333.68 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET

文件：326.43 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Power MOSFET

文件：157.84 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSFET/場效應(yīng)管

BlueRocket

藍(lán)箭電子