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          首頁 >IRF520>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF520PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

          文件:135.35 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF520S

          Power MOSFET

          FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling ? Material categorization: for definitions of compliance

          文件:212.59 Kbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF520S_V01

          Power MOSFET

          FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling ? Material categorization: for definitions of compliance

          文件:212.59 Kbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF520V

          Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:200.52 Kbytes 頁數(shù):8 Pages

          IRF

          IRF520VL

          Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:129.08 Kbytes 頁數(shù):10 Pages

          IRF

          IRF520VPBF

          HEXFET? Power MOSFET

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:150.34 Kbytes 頁數(shù):8 Pages

          IRF

          IRF520VS

          Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:129.08 Kbytes 頁數(shù):10 Pages

          IRF

          IRF520_17

          Power MOSFET

          文件:282 Kbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF520A

          isc N-Channel MOSFET Transistor

          文件:280.41 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRF520N

          isc N-Channel MOSFET Transistor

          文件:294.54 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            48000mW

          • Maximum Operating Temperature:

            175°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            100V

          • Maximum Continuous Drain Current:

            9.7A

          • Material:

            Si

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          IR
          24+
          TO-220
          2000
          全新原裝深圳倉庫現(xiàn)貨有單必成
          詢價(jià)
          IR
          24+
          TO 220
          161301
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          onsemi(安森美)
          25+
          TO-220AB
          22412
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          IR
          25+
          TO220
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          IR
          06+
          TO-220
          8000
          原裝庫存
          詢價(jià)
          IR
          24+
          原廠封裝
          5000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          24+/25+
          33
          原裝正品現(xiàn)貨庫存價(jià)優(yōu)
          詢價(jià)
          IR
          15+
          TO-220
          11560
          全新原裝,現(xiàn)貨庫存,長期供應(yīng)
          詢價(jià)
          IOR
          24+
          TO220
          200
          詢價(jià)
          更多IRF520供應(yīng)商 更新時(shí)間2026-1-19 14:24:00
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