首頁 >IRF520VPBF>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF520VPBF | HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：150.34 Kbytes 頁數：8 Pages | IRF | IRF | |
Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：129.08 Kbytes 頁數：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET 文件：225.14 Kbytes 頁數：11 Pages | IRF | IRF | ||
Advanced Power MOSFET FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.155 Ω(Typ.) 文件：252.99 Kbytes 頁數：7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
詳細參數
- 型號：
IRF520VPBF
- 制造商：
International Rectifier
- 功能描述：
MOSFET N 100V 9.6A TO-220
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
387 |
詢價 | |||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VBSEMI/臺灣微碧 |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VB |
25+ |
TO220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
10+ |
TO-220 |
2480 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
22+ |
TO-220 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-220 |
4980 |
原廠原裝正品 |
詢價 | ||
IR |
23+ |
TO-220 |
8560 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
IR |
23+ |
TO-220 |
7000 |
詢價 |
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