N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE

文件：181.76 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

文件：221.11 Kbytes 頁數(shù)：8 Pages

SYC

N-Channel Power Mosfets,

文件：338.75 Kbytes 頁數(shù)：5 Pages

ARTSCHIP

Power MOSFET

文件：282 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? 175 °C operating temperature;

Vishay

威世

9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET

Renesas

瑞薩

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

Microchip

微芯科技

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

文件：158.55 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.155Ω (Typ.)

文件：243.94 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體