| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor ? DESCRITION ? High Current ,High Speed Switching ? DC-DC&DC-AC Converters ? Motor Control ,Audio Amplifiers ? FEATURES ? Typical RDS(on) =0.23Ω ? Avalanche Rugged Technology ? High Current Capability ? Low Gate Charge ? 175℃ Operating Temperature 文件：55.23 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE 文件：181.76 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：185.16 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：116.9 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in 文件：1.09122 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：405.26 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in 文件：1.09122 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：185.16 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：405.26 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET HEXFET? Power MOSFET 文件：224.76 Kbytes 頁數(shù)：8 Pages | IRF | IRF |
技術參數(shù)
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
48000mW
- Maximum Operating Temperature：
175°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
100V
- Maximum Continuous Drain Current：
9.7A
- Material：
Si
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
IR |
24+ |
TO 220 |
161301 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
onsemi(安森美) |
25+ |
TO-220AB |
22412 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
25+ |
TO220 |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
IR |
06+ |
TO-220 |
8000 |
原裝庫存 |
詢價 | ||
IR |
24+ |
原廠封裝 |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
24+/25+ |
33 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應 |
詢價 | ||
IOR |
24+ |
TO220 |
200 |
詢價 |
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