Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.155Ω (Typ.)

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

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ISC

無錫固電

Advanced Power MOSFET

ONSEMI

安森美半導體

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE

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STMICROELECTRONICS

意法半導體

isc N-Channel MOSFET Transistor

? DESCRITION ? High Current ,High Speed Switching ? DC-DC&DC-AC Converters ? Motor Control ,Audio Amplifiers ? FEATURES ? Typical RDS(on) =0.23Ω ? Avalanche Rugged Technology ? High Current Capability ? Low Gate Charge ? 175℃ Operating Temperature

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ISC

無錫固電

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF