| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF520N | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：116.9 Kbytes 頁數(shù)：8 Pages | IRF | IRF | |
IRF520N | isc N-Channel MOSFET Transistor 文件：294.54 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in 文件：1.09122 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：405.26 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：185.16 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in 文件：1.09122 Mbytes 頁數(shù)：10 Pages | KERSEMI | KERSEMI | ||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：405.26 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor 文件：338.56 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Isc N-Channel MOSFET Transistor 文件：300.27 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Advanced Process Technology 文件：195.99 Kbytes 頁數(shù)：11 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF520NPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
200 m?
- ID @25°C max：
9.7 A
- QG typ @10V：
16.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飛凌原裝特價(jià)IRF520N即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
IOR |
24+ |
TO220 |
9518 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)! |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
5450 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
24+ |
T0-220 |
8866 |
詢價(jià) | |||
IR |
25+ |
TO220 |
20 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
23+ |
TO-220-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
25+23+ |
TO-220 |
25650 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
65230 |
詢價(jià) |
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