N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

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FAIRCHILD

仙童半導(dǎo)體

9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：69.18 Kbytes 頁(yè)數(shù)：7 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件：135.35 Kbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

文件：158.55 Kbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET? Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at pow

文件：183.9 Kbytes 頁(yè)數(shù)：6 Pages

IRF

N-Channel MOSFET Transistor

? DESCRITION ? Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ? FEATURES ? Low RDS(on) ? VGS Rated at ±20V ? Silicon Gate for Fast Switching Speed ? Rugged ? Low Drive Require

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ISC

無(wú)錫固電

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFETs, 11 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ? Low RDs

文件：798.54 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs Applications □ Motor control □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoides, Lamps, Memeories, Displays, Bipolar Transistors, etc.)

文件：74.44 Kbytes 頁(yè)數(shù)：2 Pages

SUTEX