20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 16 A, 20

文件：90.32 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

Features ? VDS= 30V, ID= 25 A RDS(ON)

文件：974.53 Kbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

Single P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V). Features ? –10 A, –20 V. RDS(ON) = 13 mW

文件：247.14 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductors advanced PowerTrench? process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features ? –11 A, –20 V. RDS(ON) = 0.014

文件：607.53 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel Logic Level PowerTrench MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features ? –6.3 A, –30 V. RDS(ON) = 0.032 Ω @ VGS

文件：646.28 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

文件：339.7 Kbytes 頁數(shù)：18 Pages

MICROSEMI

美高森美

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and

文件：246.99 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fds6612a/marking.html">FDS6612A；Package：SOP-8；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 8.4A RDS(ON)

文件：479.23 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features ? 9.3 A, 30 V. RDS(ON) = 0.018 Ω @ V

文件：275.19 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 13 A, 30

文件：79.06 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體