P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductors advanced PowerTrench? process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features ? –11 A, –20 V. RDS(ON) = 0.014

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FAIRCHILD

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P-Channel 2.5V Specified PowerTrench MOSFET

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FAIRCHILD

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P溝道2.5V額定PowerTrench? MOSFET

此P溝道2.5V額定MOSFET是采用飛兆半導(dǎo)體先進(jìn)的PowerTrench?工藝生產(chǎn)的穩(wěn)固?hào)艠O版本。 它已針對(duì)廣泛柵極驅(qū)動(dòng)電壓(2.5V – 12V)的電源管理應(yīng)用進(jìn)行了優(yōu)化。 ?-11 A，-20 V。\n?RDS(ON) = 0.014 Ω @ VGS = -4.5 V\n?RDS(ON) = 0.020 Ω @ VGS = -2.5 V\n?擴(kuò)展了VGSS范圍(+-12V)，適合電池應(yīng)用\n?低柵極電荷（典型值44 nC）\n?快速開(kāi)關(guān)速度\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(on)\n?高功率和高電流處理能力\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

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P-Channel 2.5V Specified PowerTrench MOSFET

文件：451.02 Kbytes 頁(yè)數(shù)：5 Pages

FAIRCHILD

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