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          首頁 >FDS>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDS5680

          絲?。?a target="_blank" title="Marking" href="/fds5680/marking.html">FDS5680;60V N-Channel PowerTrench? MOSFET

          General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery p

          文件:235.59 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS5680-TP

          N-Channel Enhancement Mode Power MOSFET

          General Features ? Vos =60VIo 8A Roson

          文件:2.30698 Mbytes 頁數(shù):5 Pages

          TECHPUBLIC

          臺(tái)舟電子

          FDS5682

          N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

          文件:388.26 Kbytes 頁數(shù):12 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS5682_NL

          N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

          文件:388.26 Kbytes 頁數(shù):12 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS5690

          60V N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features ? 7 A, 60 V. RDS(on) = 0.028 ? @ VGS = 10 V RDS(on) = 0.0

          文件:236.15 Kbytes 頁數(shù):8 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS5692Z

          N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24m Ohm

          General Description This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■

          文件:121.51 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6064N3

          20V N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

          文件:189.85 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6064N7

          20V N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

          文件:198.91 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6162N3

          20V N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS(O

          文件:189.14 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6162N7

          20V N-Channel PowerTrench MOSFET

          General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “l(fā)ow side” synchronous rectifier operation, providing an extremely low RDS

          文件:197.24 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          技術(shù)參數(shù)

          • 電壓[V]:

            1200

          • 電流(/chip)[A]:

            100

          • 電流(/total)[A]:

            100

          • IF(AV)A:

            100

          • IF(AV)℃:

            78

          • IFSM[A(60Hz)]:

            2000

          • I2t[A2s]:

            16600

          • VFM[V(25℃)]:

            1.8

          • IRRM[mA(125℃)]:

            5(150℃)

          • trr[ns]:

            300

          • Rthj-c[℃/W]:

            0.4

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          更多FDS供應(yīng)商 更新時(shí)間2026-1-20 17:10:00
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