30V N-Channel Fast Switching PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 13 A, 30

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FAIRCHILD

仙童半導(dǎo)體

30V N-Channel Fast Switching PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ■ 13 A, 30

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FAIRCHILD

仙童半導(dǎo)體

20 V, 6 A Synchronous Step-Down

GENERAL DESCRIPTION The ADP2381 is a current mode control, synchronous, step down, dc-to-dc regulator. It integrates a 44 m? power MOSFET and a low-side driver to provide a high efficiency solution. The ADP2381 runs from an input voltage of 4.5 V to 20 V and can deliver 6 A of output current. T

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AD

亞德諾

N-Channel Enhancement Mode Power MOSFET

Features ? VDS= 20V, ID= 10 A RDS(ON)

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BYCHIP

百域芯

30V N-Channel PowerTrench SyncFET

General Description The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a

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FAIRCHILD

仙童半導(dǎo)體

Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V). Features · –8 A, –20 V. RDS(ON) =

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FAIRCHILD

仙童半導(dǎo)體

30V N-Channel MOSFET

Features ? Low gate charge (47nC typical). ? Fast switching speed. ?High performance trench technology for extremely low RDS(ON) ? High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

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UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fds6570/marking.html">FDS6570；Package：SOP-8；30V N-Channel MOSFET

Features ? Low gate charge (47nC typical). ? Fast switching speed. ?High performance trench technology for extremely low RDS(ON) ? High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

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UMW

友臺半導(dǎo)體

Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

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FAIRCHILD

仙童半導(dǎo)體

20V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ? 16 A, 20

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FAIRCHILD

仙童半導(dǎo)體