絲印：FDS6612A；Package：SOP-8；30V N-Channel MOSFET

Features Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 8.4A RDS(ON)

文件：479.23 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

文件：339.7 Kbytes 頁數(shù)：18 Pages

MICROSEMI

美高森美

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and

文件：246.99 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Single N-Channel, Logic-Level, PowerTrench MOSFET

文件：164.38 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

Single N-Channel, Logic-Level, PowerTrench MOSFET

文件：164.38 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel 20V (D-S) MOSFET

文件：1.00896 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

單 N 溝道，邏輯電平，Power Trench? MOSFET，30V，8.4A，22mΩ

該N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大限度地降低導(dǎo)通阻抗并保持卓越開關(guān)性能而定制的。 這些器件非常適合于需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?8.4 A，30 V\n?RDS(ON) = 22 mΩ @ VGS = 10 V\n?RDS(ON) = 30 mΩ @ VGS = 4.5 V\n?快速開關(guān)速度\n?低柵極電荷 \n?高性能溝道技術(shù)可實現(xiàn)極低的rDS(on)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體