P-Channel Logic Level PowerTrench MOSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features ? –6.3 A, –30 V. RDS(ON) = 0.032 Ω @ VGS

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FAIRCHILD

仙童半導體

P-Channel Logic Level PowerTrench MOSFET

ONSEMI

安森美半導體

RF AMPLIFIER MODEL

文件：73.95 Kbytes 頁數(shù)：1 Pages

APITECH

Power MOSFET

Description The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

文件：230.62 Kbytes 頁數(shù)：10 Pages

IRF

Low Conduction Losses

Description The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

文件：264.79 Kbytes 頁數(shù)：11 Pages

IRF