100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

文件：423.79 Kbytes 頁數(shù)：6 Pages

UMW

友臺半導體

Single N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and

文件：242.78 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench SyncFET

General Description The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky d

文件：114.57 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

6A, 24V, 600kHz Step-Down Converter with Synchronous Gate Driver

General Description The RT8298 is a synchronous step-down DC/DC converter with an integrated high side internal power MOSFET and a gate driver for a low side external power MOSFET. It can deliver up to 6A output current from a 4.5V to 24V input supply. Features 4.5V to 24V Input Voltage

文件：330.72 Kbytes 頁數(shù)：18 Pages

RICHTEK

立锜科技

30V N-Channel PowerTrench SyncFET

General Description The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky d

文件：114.57 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

30V N-Channel PowerTrench SyncFET

General Description The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670S includes an integrated Schottky diode

文件：95.75 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

絲?。?a target="_blank" title="Marking" href="/fds6675/marking.html">FDS6675；Package：SOP-8；-30V P-Channel MOSFET

Features (VGS = -10V) VDS (V) =-30V ID = -11 A R DS(ON)

文件：358.73 Kbytes 頁數(shù)：6 Pages

UMW

友臺半導體

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -30V, ID= -14A RDS(ON)

文件：1.9309 Mbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

30V N-Channel MOSFET

Features ? Includes SyncFET Schottky body diode ? Low gate charge (45nC typical) ? High performance trench technology for extremely low RDS(ON) and fast switching ? High power and current handling capability RoHS Compliant (VGS = 10V) VDS (V) =30V ID = 13 A RDS(ON)

文件：480.03 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

絲?。?a target="_blank" title="Marking" href="/fds6676/marking.html">FDS6676；Package：SOP-8；30V N-Channel MOSFET

Features ? Includes SyncFET Schottky body diode ? Low gate charge (45nC typical) ? High performance trench technology for extremely low RDS(ON) and fast switching ? High power and current handling capability RoHS Compliant (VGS = 10V) VDS (V) =30V ID = 13 A RDS(ON)

文件：480.03 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體