P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.08Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC

文件：213.32 Kbytes 頁(yè)數(shù)：7 Pages

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P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

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P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

文件：79.87 Kbytes 頁(yè)數(shù)：5 Pages

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P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description\nThis P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-D ? -16 A, -20 V.\n?? RDS(on) = 0.08 ? @ VGS = -4.5 V\n?? RDS(on) = 0.11 ? @ VGS = -2.5 V.\n? Critical DC electrical parameters specified at elevated\n?? temperature.\n? High density cell design for extremely low RDS(on).\n? TO-220 and TO-263 (D2PAK) package for both\n?? through hole and surface mount;

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