N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

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FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

文件：401.43 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.57 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：473.58 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

N 溝道邏輯電平 PowerTrench? MOSFET 30V，40A，18mΩ

此N溝道邏輯電平MOSFET已經(jīng)過專門設(shè)計，采用同步或常規(guī)的開關(guān)PWM控制器提高DC/DC轉(zhuǎn)換器的整體效率。 這些MOSFET與其他具有可比RDS(on)規(guī)格的MOSFET相比，具有更快的開關(guān)速度和更低的柵極電荷，從而產(chǎn)生整體效率更高的DC/DC電源設(shè)計。 ?40 A，30 V\n?RDS(ON) = 0.018 Ω @ VGS = 10 V\n?RDS(ON) = 0.024 Ω @ VGS = 4.5 V\n?在高溫下指定的臨界DC電氣參數(shù)。\n?耐用的內(nèi)部源極-漏極二極管使得無需使用外部齊納二極管瞬態(tài)抑制器。\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON).\n?175°C最大結(jié)溫額定值。;

ONSEMI

安森美半導(dǎo)體

MOSFET N-CH 30V 48A TO-220

ONSEMI

安森美半導(dǎo)體