N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

文件：112.6 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：471.43 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導體

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

文件：112.6 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9 mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：333.4 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

30V N-Channel PowerTrench?SyncFET?

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottk

文件：82.84 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7 mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.5 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：471.43 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導體

N 溝道邏輯電平 PowerTrench? MOSFET 30V，60A，9mΩ

此N溝道邏輯電平MOSFET已經過專門設計，采用同步或常規(guī)的開關PWM控制器提高DC/DC轉換器的整體效率。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關速度和更低的柵極電荷。 因此，這是一款更易于驅動且更安全（在高頻段也是如此）的MOSFET，可實現(xiàn)具有更高總效率的DC/DC電源設計。 已針對低柵極電荷、低rDS(ON) 和高速開關進行了優(yōu)化。 ?60 A，30 V\n?RDS(ON) = 9 mΩ @ VGS = 10 V\n?RDS(ON) = 12 mΩ @ VGS = 4.5 V\n?在高溫下指定的臨界DC電氣參數(shù)\n?高性能溝道技術可實現(xiàn)極低的rDS(on)\n?175°C最大結溫額定值;

ONSEMI

安森美半導體

MOSFET N-CH 30V 80A TO-220

ONSEMI

安森美半導體