75V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

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75V N-Channel MOSFET

文件：674.5 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

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75V N-Channel MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：332.47 Kbytes 頁數(shù)：2 Pages

ISC

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75V N-Channel MOSFET

Description UniFET? MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

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FAIRCHILD

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75V N-Channel MOSFET

文件：674.5 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

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功率 MOSFET，N 溝道，UniFETTM，75 V，75 A，11 m?，TO-220

這些N溝道增強模式功率場效應晶體管采用飛兆專有的平面條形DMOS技術生產(chǎn)。 這一先進技術是專為最大限度地降低通態(tài)電阻，提供卓越開關性能，以及在雪崩和交換模式下承受高能量脈沖而定制的。 這些器件非常適合高效開關電源、有源功率因數(shù)校正以及基于半橋拓撲的電子燈鎮(zhèn)流器。 ?75A，75V，RDS(on) = 0.011? @VGS = 10 V\n?低柵極電荷（典型值145 nC）\n?低Crss（典型值86 pF）\n?快速開關\n? Improved dv/dt Capability;

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