75V N-Channel MOSFET

Description UniFET? MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

無錫固電

功率 MOSFET，N 溝道，UniFETTM，75 V，75 A，11 m?，TO-220

這些N溝道增強(qiáng)模式功率場效應(yīng)晶體管采用飛兆專有的平面條形DMOS技術(shù)生產(chǎn)。 這一先進(jìn)技術(shù)是專為最大限度地降低通態(tài)電阻，提供卓越開關(guān)性能，以及在雪崩和交換模式下承受高能量脈沖而定制的。 這些器件非常適合高效開關(guān)電源、有源功率因數(shù)校正以及基于半橋拓?fù)涞碾娮訜翩?zhèn)流器。 ?75A，75V，RDS(on) = 0.011? @VGS = 10 V\n?低柵極電荷（典型值145 nC）\n?低Crss（典型值86 pF）\n?快速開關(guān)\n? Improved dv/dt Capability;

ONSEMI

安森美半導(dǎo)體

75A 80V N Channel Mosfet Transistor

█ APPLICATIONSL Low Voltage high-Speed Switching. Tstg——Storage Temperature…… … …… … … … … -55~175℃ Tj ——Operating Junction Temperature ………………150℃ PD —— Allowable Power Dissipation（ Tc=25℃ ） ………173W VGSS —— Gate-Source Voltage … … ……… …… … …±20V VDSS —— Drain-Source Voltage

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FCI

富加宜

N-Channel MOSFET

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HUASHAN

華汕電子器件

N-Channel Advanced Power MOSFET

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RUICHIPS

銳駿半導(dǎo)體