isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：331.77 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

60V N-Channel MOSFET

文件：1.18877 Mbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，UniFETTM，60 V，55 A，22mΩ，TO-220

UniFETTMMOSFET 是飛兆半導(dǎo)體的高壓 MOSFET 系列產(chǎn)品，基于平面條形技術(shù)和 DMOS 技術(shù)。該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強度。該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正(PFC)、平板顯示器(FPD)電視電源、ATX 及燈用電子鎮(zhèn)流器。 ?RDS(on) = 22 m? （最大值），需 VGS = 10 V、ID = 27.5 A柵極電荷低（典型值：30nC)\n?低 Crss（典型值60pF)\n?100% 經(jīng)過雪崩擊穿測試\n?100% avalanche tested;

ONSEMI

安森美半導(dǎo)體

60V N-Channel MOSFET

文件：1.18877 Mbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=55A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：322.92 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：601.08 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體