N-Channel PowerTrench MOSFET 100V, 61A, 16m?

Features ? rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 61A ? Qg(tot) = 41nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC Converters and Off-line UPS ? Distributed Power Architectures

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 61A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無錫固電

N-Channel PowerTrench? MOSFET, 100V, 61A, 16m?

?rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 61A \n?Qg(tot) = 41nC (Typ.), VGS = 10V \n?Low Miller Charge \n?Low Qrr Body Diode \n?UIS Capability (Single Pulse and Repetitive Pulse);

ONSEMI

安森美半導(dǎo)體

RECTIFIER DIODE

RECTIFIER DIODE VOLTAGE UP TO 2400 V AVERAGE CURRENT 6520 A SURGE CURRENT 60 kA

文件：112.75 Kbytes 頁數(shù)：1 Pages

GPSEMI

RECTIFIER DIODE

文件：150.43 Kbytes 頁數(shù)：2 Pages

GPSEMI

HAND HELD PLASTIC STYLE 2

文件：179.54 Kbytes 頁數(shù)：2 Pages

BUD