絲印：FDPF18N50；Package：TO-220F；N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ

Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for

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ONSEMI

安森美半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

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500V N-Channel MOSFET

Description UniFET? MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

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FAIRCHILD

仙童半導體

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

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FAIRCHILD

仙童半導體

Dual BCM PFC Controller

Overview of the Evaluation Board The FAN9611/12 interleaved dual Boundary-Conduction-Mode (BCM) Power-FactorCorrection (PFC) controllers operate two parallel-connected boost power trains 180o out of phase. Interleaving extends the maximum practical power level of the control technique from about

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FAIRCHILD

仙童半導體

500V N-Channel MOSFET

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FAIRCHILD

仙童半導體

Power Factor Correction Converter Design

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FAIRCHILD

仙童半導體

功率 MOSFET，N 溝道，UniFETTM，500 V，18 A，265 m?，TO-220F

UniFETTM MOSFET 是飛兆半導體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強度。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及照明設(shè)備用鎮(zhèn)流器。 ?RDS(on) = 265m? （最大值）@ VGS = 10V, ID = 9A\n?低柵極電荷（典型值 45nC） \n?低 Crss（典型值 25pF） \n?100% 經(jīng)過雪崩擊穿測試;

ONSEMI

安森美半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：323.93 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

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ISC

無錫固電