60V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：598.45 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=65A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：332.41 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，UniFETTM，60 V，65 A，16 m?，TO-220

這些N溝道增強(qiáng)模式功率場效應(yīng)晶體管采用飛兆專有的平面條形DMOS技術(shù)生產(chǎn)而成。 這一先進(jìn)技術(shù)是專為最大限度地降低通態(tài)電阻、提供卓越開關(guān)性能以及在雪崩和交換模式下承受高能量脈沖而定制的。 這些器件非常適合高效開關(guān)電源、有源功率因數(shù)校正以及基于半橋拓?fù)涞碾娮訜翩?zhèn)流器。 ? RDS(on) = 13m? (Max.)@ VGS = 10V, ID = 32.5A\n? Low gate charge (Typ. 33nC)\n? Low Crss (Typ. 35pF)\n? Fast Switching Speed\n? Improved dv/dt Capability;

ONSEMI

安森美半導(dǎo)體

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：652.83 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=72A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver

文件：362.79 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

60V N-Channel MOSFET

文件：653.74 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體