500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.25 Kbytes 頁數(shù)：2 Pages

ISC

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500V N-Channel MOSFET

文件：447.41 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，UniFETTM，500V，16A，380m?，TO-220F

UniFETTM MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品，基于平面條形技術(shù)和 DMOS 技術(shù)。 該 MOSFET 產(chǎn)品專用于降低通態(tài)電阻，并提供更好的開關(guān)性能和更高的雪崩能量強度。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用，如功率因數(shù)校正（PFC）、平板顯示器（FPD）電視電源、ATX 及燈用電子鎮(zhèn)流器。 ?RDS(on) = 380m? （最大值）@ VGS = 10V, ID = 8.3A\n?低柵極電荷（典型值 32nC)\n?低 Crss（典型值 20pF)\n?100% 經(jīng)過雪崩擊穿測試;

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.25 Kbytes 頁數(shù)：2 Pages

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N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m廓

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

文件：1.36447 Mbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.41 Kbytes 頁數(shù)：2 Pages

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N-Channel UniFETTM Ultra FRFET MOSFET

Description UniFET? MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has

文件：826.26 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

R DS(on) = 370 m廓 ( Typ.) @ VGS = 10 V, ID = 7.5 A

Description UniFET? MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has

文件：826.26 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

500V N-Channel MOSFET

文件：800.95 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體