N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7m?

Features ? rDS(ON) = 4.0m? (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 92nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? 42V Automotive Load Control ? Starter / Altern

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仙童半導(dǎo)體

N-Channel PowerTrench MOSFET 75V, 80A, 4.7m?

Features ? rDS(ON) = 4.0m? (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 92nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? 42V Automotive Load Control ? Starter / Altern

文件：606.43 Kbytes 頁數(shù)：10 Pages

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仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.7 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：355.06 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7m?

Features ? rDS(ON) = 4.0m? (Typ.), VGS = 10V, ID = 80A ? Qg(tot) = 92nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? 42V Automotive Load Control ? Starter / Altern

文件：246.82 Kbytes 頁數(shù)：10 Pages

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仙童半導(dǎo)體

N 溝道，PowerTrench? MOSFET，75V，80A，4.7m?

?rDS(ON) = 4.0 mΩ (Typ.), VGS = 10V, ID = 80A \n?Qg(tot) = 92nC (Typ.), VGS = 10V \n?Low Miller Charge \n?Low QRR Body Diode \n?UIS Capability (Single Pulse and Repetitive Pulse);

ONSEMI

安森美半導(dǎo)體

Package：TO-220-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 75V 80A TO220-3

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安森美半導(dǎo)體