N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：413.48 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半導(dǎo)體

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 46 A, 30 V RDS(ON)=

文件：119.89 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 46 A, 30 V RDS(ON)=

文件：119.89 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel 30-V (D-S) MOSFET

文件：1.02 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體