N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

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30V N-Channel PowerTrench?SyncFET?

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottk

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N 溝道，PowerTrench? MOSFET，邏輯電平，30V，60A，9mΩ

此N溝道邏輯電平MOSFET已經(jīng)過專門設(shè)計(jì)，采用同步或常規(guī)的開關(guān)PWM控制器提高DC/DC轉(zhuǎn)換器的整體效率。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 結(jié)果是MOSFET易于驅(qū)動，并且驅(qū)動安全性更高（即使在非常高的頻率），而且DC/DC電源設(shè)計(jì)具有更高的整體效率。 已針對低柵極電荷、低 rDS(on) 和高速開關(guān)進(jìn)行了優(yōu)化。 60 A，30 V \n RDS(ON) = 9 mΩ @ VGS = 10 V\n RDS(ON) = 12 mΩ @ VGS = 4.5 V\n 在高溫下指定的臨界DC電氣參數(shù)\n 高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n 175°C最高結(jié)溫額定值;

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

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30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

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30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

文件：126.76 Kbytes 頁數(shù)：6 Pages

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