N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=54A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無(wú)錫固電

30V N溝道PowerTrench? MOSFET

此N溝道MOSFET是專為使用同步或傳統(tǒng)開(kāi)關(guān)PWM控制器來(lái)改進(jìn)DC/DC轉(zhuǎn)換器整體功效而設(shè)計(jì)的。 已針對(duì)低柵極電荷、低rDS(ON) 和高速開(kāi)關(guān)進(jìn)行了優(yōu)化。 rDS(ON) = 14.5mΩ，VGS = 4.5V，VD = 40V\n rDS(ON) = 11.6mΩ，VGS = 10V，VD = 40V\n 高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n 低柵極電荷 \n 高功率和高電流處理能力\n 符合RoHS標(biāo)準(zhǔn);

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N-Channel PowerTrench MOSFET

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N-Channel PowerTrench? MOSFET 30V, 58A, 9m廓

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N-Channel 30-V (D-S) MOSFET

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VBSEMI

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