30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky di

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FAIRCHILD

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30V N-Channel PowerTrench SyncFET

ONSEMI

安森美半導(dǎo)體

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

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FAIRCHILD

仙童半導(dǎo)體

30V N-Channel MOSFET

Features · RDS(ON )= 8 mW（ VGS = 10 V） · RDS(ON) = 10 mW（ VGS = 4.5 V） · Low gate charge · Fast Switching · High performance trench technology for extremely low RDS(ON) · VDS (V) = -30V

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UMW

友臺半導(dǎo)體

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(

文件：195.65 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體