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          首頁 >FDB8030L>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FDB8030L

          N-Channel Logic Level PowerTrench MOSFET

          General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V RDS(ON) = 0.0045 ? @ VGS = 4.5 V

          文件:358.16 Kbytes 頁數(shù):10 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDB8030L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID=80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:328.84 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FDB8030L

          N 溝道,PowerTrench? MOSFET,邏輯電平,30V,80A,4.5mΩ

          此N溝道邏輯電平MOSFET已經(jīng)過專門設(shè)計(jì),采用同步或常規(guī)的開關(guān)PWM控制器提高DC/DC轉(zhuǎn)換器的整體效率。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比,這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。結(jié)果是MOSFET易于驅(qū)動,并且驅(qū)動安全性更高(即使在非常高的頻率),而且DC/DC電源設(shè)計(jì)具有更高的整體效率。 ? 80A, 30 V\n? RDS(ON) = 0.0035 Ω@ VGS =10 V\n? RDS(ON) = 0.0045 Ω@ VGS =4.5 V? 在高溫下指定的臨界DC電氣參數(shù)? 耐用的內(nèi)部源極-漏極二極管使得無需使用外部齊納二極管瞬態(tài)抑制器。? 高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)? 175°C最大結(jié)溫額定值\n? Critical DC electrical parameters specified atelevated temperature\n? Rugged internal source-drain diode can eliminate theneed for ;

          ONSEMI

          安森美半導(dǎo)體

          FDMC8030

          Dual N-Channel Power Trench? MOSFET 40 V, 12 A, 10 m廓

          文件:341.18 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDP8030L

          N-Channel Logic Level PowerTrench MOSFET

          General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V RDS(ON) = 0.0045 ? @ VGS = 4.5 V

          文件:358.16 Kbytes 頁數(shù):10 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDP8030L

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

          文件:332.97 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            30

          • VGS Max (V):

            20

          • VGS(th) Max (V):

            2

          • ID Max (A):

            80

          • PD Max (W):

            187

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            4.5

          • RDS(on) Max @ VGS = 10 V(mΩ):

            3.5

          • Qg Typ @ VGS = 10 V (nC):

            120

          • Ciss Typ (pF):

            10500

          • Package Type:

            D2PAK-3/TO-263-2

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          更多FDB8030L供應(yīng)商 更新時(shí)間2026-1-19 18:39:00
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