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          首頁 >CEU>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEU3112

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 30V, 45A, RDS(ON) = 11mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V.

          文件:441.18 Kbytes 頁數(shù):5 Pages

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          CEU3120

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 30V, 36A , RDS(ON) = 15mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 22mW @VGS = 4.5V. Lead free product is acquired.

          文件:628.66 Kbytes 頁數(shù):4 Pages

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          華瑞

          CEU3120

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 36A , RDS(ON) = 15m? @VGS = 10V. RDS(ON) = 22m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:893.88 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU3133

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -30V, -35A, RDS(ON) = 16mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 27mW @VGS = -4.5V. RoHS compliant.

          文件:778.43 Kbytes 頁數(shù):5 Pages

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          CEU3159

          Dual Enhancement Mode Field Effect Transistor (N and P Channel)

          FEATURES 30V , 22A , RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 20mW @VGS = 4.5V. -30V , -13A , RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. TO-252-4L package. RoHS compliant.

          文件:1.16061 Mbytes 頁數(shù):7 Pages

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          華瑞

          CEU3172

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 36A, RDS(ON) = 20m? @VGS = 10V. RDS(ON) = 28m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:102.08 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU3172

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 30V, 36A, RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 32mW @VGS = 4.5V. Lead free product is acquired.

          文件:662.37 Kbytes 頁數(shù):4 Pages

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          華瑞

          CEU3252

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 25A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 39m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:111.36 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU3254

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 30V, 26A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 39mW @VGS = 4.5V. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free.

          文件:436.62 Kbytes 頁數(shù):5 Pages

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          華瑞

          CEU3301

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -30V, -28A, RDS(ON) = 32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 50mW @VGS = -4.5V. Lead free product is acquired.

          文件:642.57 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          技術參數(shù)

          • BVDSS(V):

            650

          • Rds(on)mΩ@10V:

            10500

          • ID(A):

            1.2

          • Qg(nC)@10V(typ):

            5.8

          • RθJC(℃/W):

            3.5

          • Pd(W):

            35.7

          • Configuration:

            Single

          • Polarity:

            N

          供應商型號品牌批號封裝庫存備注價格
          CET
          23+
          TO252
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          CET
          25+
          SMD2
          2218
          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價
          CET
          25+
          TO252
          103
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          CET
          13+
          5171
          原裝分銷
          詢價
          CET
          25+
          DIP-14
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          CET
          17+
          TO252
          6200
          100%原裝正品現(xiàn)貨
          詢價
          CET
          00+
          SMD2
          890
          全新原裝100真實現(xiàn)貨供應
          詢價
          CET
          12+
          TO-252(DPAK)
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應。
          詢價
          SR
          23+
          TO252
          5000
          原裝正品,假一罰十
          詢價
          CET
          2016+
          TO252
          2500
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          更多CEU供應商 更新時間2026-1-20 17:50:00
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