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          首頁 >CEU>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEU

          Multilayer Ceramic Chip Capacitors

          文件:60.69 Kbytes 頁數(shù):5 Pages

          TDK

          東電化

          INA211AIDCKR

          絲?。?strong>CEU;Package:SC70(DCK);INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

          1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

          文件:1.60425 Mbytes 頁數(shù):50 Pages

          TI

          德州儀器

          INA211AIDCKR

          絲?。?strong>CEU;Package:SC70;INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

          1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

          文件:1.58588 Mbytes 頁數(shù):45 Pages

          TI

          德州儀器

          INA211AIDCKR.A

          絲?。?strong>CEU;Package:SC70(DCK);INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

          1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

          文件:1.60425 Mbytes 頁數(shù):50 Pages

          TI

          德州儀器

          INA211AIDCKT

          絲印:CEU;Package:SC70(DCK);INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

          1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

          文件:1.60425 Mbytes 頁數(shù):50 Pages

          TI

          德州儀器

          INA211AIDCKT

          絲印:CEU;Package:SC70;INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

          1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

          文件:1.58588 Mbytes 頁數(shù):45 Pages

          TI

          德州儀器

          INA211AIDCKT.A

          絲印:CEU;Package:SC70(DCK);INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

          1 Features ? Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V ? Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) ? Accuracy: –

          文件:1.60425 Mbytes 頁數(shù):50 Pages

          TI

          德州儀器

          CEU01N6

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 650V, 0.9A, RDS(ON) = 15 ? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:85.28 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU01N65

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:400.59 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU01N65A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:398.58 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          技術(shù)參數(shù)

          • BVDSS(V):

            650

          • Rds(on)mΩ@10V:

            10500

          • ID(A):

            1.2

          • Qg(nC)@10V(typ):

            5.8

          • RθJC(℃/W):

            3.5

          • Pd(W):

            35.7

          • Configuration:

            Single

          • Polarity:

            N

          供應(yīng)商型號品牌批號封裝庫存備注價格
          CET
          23+
          TO252
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          CET
          25+
          SMD2
          2218
          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價
          CET
          25+
          TO252
          103
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          CET
          13+
          5171
          原裝分銷
          詢價
          CET
          25+
          DIP-14
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          CET
          17+
          TO252
          6200
          100%原裝正品現(xiàn)貨
          詢價
          CET
          00+
          SMD2
          890
          全新原裝100真實現(xiàn)貨供應(yīng)
          詢價
          CET
          12+
          TO-252(DPAK)
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
          詢價
          SR
          23+
          TO252
          5000
          原裝正品,假一罰十
          詢價
          CET
          2016+
          TO252
          2500
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          更多CEU供應(yīng)商 更新時間2026-1-20 14:02:00
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