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          首頁(yè) >CEU>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          CEU6030L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 40A, RDS(ON) = 15.5m? @VGS = 10V. RDS(ON) = 22m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:83.21 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU6031L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 55A, RDS(ON) = 11m? @VGS = 10V. RDS(ON) = 15m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:121.59 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU6036L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 60V, 118A, RDS(ON) = 4.0mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

          文件:587.77 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEU6040SL

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 65V, 89A, RDS(ON) = 4.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 7.8mW @VGS = 4.5V.

          文件:412.42 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEU6042

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 60V, 90A , RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

          文件:475.66 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU6042

          N-Channel MOSFET uses advanced SGT technology

          Description: This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=60V,ID=130A,RDS(ON)

          文件:1.21191 Mbytes 頁(yè)數(shù):4 Pages

          DOINGTER

          杜因特

          CEU6044L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 60V, 85A, RDS(ON) = 5.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 7.5mW @VGS = 4.5V.

          文件:696 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEU6056

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 60V, 76A , RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

          文件:468.3 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEU6056

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:356.33 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU6056L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 60V, 78A, RDS(ON) = 6.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 9.0mW @VGS = 4.5V.

          文件:647.37 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          技術(shù)參數(shù)

          • BVDSS(V):

            650

          • Rds(on)mΩ@10V:

            10500

          • ID(A):

            1.2

          • Qg(nC)@10V(typ):

            5.8

          • RθJC(℃/W):

            3.5

          • Pd(W):

            35.7

          • Configuration:

            Single

          • Polarity:

            N

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          更多CEU供應(yīng)商 更新時(shí)間2026-1-20 17:50:00
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