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          首頁 >CEU>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEU15N60LN

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 600V, 13.6A, RDS(ON) = 0.28W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

          文件:511.86 Kbytes 頁數(shù):5 Pages

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          CEU15N60SA

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 650V@TJ max, 13.4A, RDS(ON) = 0.28W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

          文件:524.94 Kbytes 頁數(shù):5 Pages

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          CEU1610LA

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 36A, RDS(ON) = 16.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 24 mW @VGS = 4.5V.

          文件:937.78 Kbytes 頁數(shù):5 Pages

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          CEU16N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 13.3A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

          文件:353.55 Kbytes 頁數(shù):4 Pages

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          CEU16N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:628.86 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU16N10L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:690 Kbytes 頁數(shù):4 Pages

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          華瑞

          CEU16N10L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 13.3A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. RDS(ON) = 125mW @VGS = 5V.

          文件:491.95 Kbytes 頁數(shù):5 Pages

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          CEU16N10SL

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 12A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 165mW @VGS = 3V. RDS(ON) = 130mW @VGS = 5V.

          文件:518.02 Kbytes 頁數(shù):5 Pages

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          CEU1710

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 17A, RDS(ON) = 85m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:140.97 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU2015

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 150V, 50A, RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

          文件:608.58 Kbytes 頁數(shù):5 Pages

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          華瑞

          技術參數(shù)

          • BVDSS(V):

            650

          • Rds(on)mΩ@10V:

            10500

          • ID(A):

            1.2

          • Qg(nC)@10V(typ):

            5.8

          • RθJC(℃/W):

            3.5

          • Pd(W):

            35.7

          • Configuration:

            Single

          • Polarity:

            N

          供應商型號品牌批號封裝庫存備注價格
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          更多CEU供應商 更新時間2026-1-20 17:50:00
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