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                >CEU>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    CEU20N06
    N-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
■ 60V, 20A, RDS(ON) = 55m? @VGS = 10V.
                    RDS(ON) = 75m? @VGS = 4.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
    文件：124.65 Kbytes 頁數(shù)：4 Pages
    CET
    華瑞
    

    CEU20P06
    P-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
■ -60V, -13A, RDS(ON) = 105m? @VGS = -10V.
                      RDS(ON) = 150m? @VGS = -4.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
    文件：143.45 Kbytes 頁數(shù)：4 Pages
    CET
    華瑞
    

    CEU20P06
    P-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
-60V, -13A, RDS(ON) = 125mW @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
RDS(ON) = 175mW @VGS = -4.5V.
Lead free product is acquired.
    文件：610.74 Kbytes 頁數(shù)：4 Pages
    CET-MOS
    華瑞
    

    CEU20P10
    P-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
-100V, -16A, RDS(ON) = 130mW @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
RoHS compliant.
    文件：640.03 Kbytes 頁數(shù)：4 Pages
    CET-MOS
    華瑞
    

    CEU20P10
    P-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
■ -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead-free plating ; RoHS compliant.
■ TO-251 & TO-252 package.
    文件：379.25 Kbytes 頁數(shù)：4 Pages
    CET
    華瑞
    

    CEU2182
    N-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
■ 20V, 42A, RDS(ON) = 18m? @VGS = 4.5V.
                    RDS(ON) = 25m? @VGS = 2.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
    文件：141.37 Kbytes 頁數(shù)：4 Pages
    CET
    華瑞
    

    CEU21A2
    N-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
20V, 20A, RDS(ON) = 40mW @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
RDS(ON) = 70mW @VGS = 2.5V.
Lead free product is acquired.
    文件：1.27844 Mbytes 頁數(shù)：4 Pages
    CET-MOS
    華瑞
    

    CEU21A2
    N-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
■ 20V, 20A, RDS(ON) = 40m? @VGS = 4.5V.
                    RDS(ON) = 70m? @VGS = 2.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
    文件：152.02 Kbytes 頁數(shù)：4 Pages
    CET
    華瑞
    

    CEU2215
    N-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
150V, 22A, RDS(ON) = 80mW @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
RDS(ON) = 90mW @VGS = 7V.
RoHS compliant.
    文件：623.33 Kbytes 頁數(shù)：4 Pages
    CET-MOS
    華瑞
    

    CEU2303
    P-Channel Enhancement Mode Field Effect Transistor
    
FEATURES
■ -30V, -9A, RDS(ON) = 200m? @VGS = -10V.
                    RDS(ON) = 320m? @VGS = -4.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
    文件：140.9 Kbytes 頁數(shù)：4 Pages
    CET
    華瑞
    

    
            
    
		
        
    
            
    
                
    技術參數(shù)
    
            
    
            
      
            	
    • BVDSS(V)：
      650
    • Rds(on)mΩ@10V：
      10500
    • ID(A)：
      1.2
    • Qg(nC)@10V(typ)：
      5.8
    • RθJC(℃/W)：
      3.5
    • Pd(W)：
      35.7
    • Configuration：
      Single
    • Polarity：
      N
    
            
    
        
    
            
    供應商型號品牌批號封裝庫存備注價格
    
                
    



    CET
    		

    23+
    		

    TO252
    		

    7000
    		

    絕對全新原裝!100%保質量特價!請放心訂購!
    		
詢價
    

    



    CET
    		

    25+
    		

    SMD2
    		

    2218
    		

    ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
    		
詢價
    

    



    CET
    		

    25+
    		

    TO252
    		

    103
    		

    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    		
詢價
    

    



    CET
    		

    13+
    		

    		

    5171
    		

    原裝分銷
    		
詢價
    

    



    CET
    		

    25+
    		

    DIP-14
    		

    18000
    		

    原廠直接發(fā)貨進口原裝
    		
詢價
    

    



    CET
    		

    17+
    		

    TO252
    		

    6200
    		

    100%原裝正品現(xiàn)貨
    		
詢價
    

    



    CET
    		

    00+
    		

    SMD2
    		

    890
    		

    全新原裝100真實現(xiàn)貨供應
    		
詢價
    

    



    CET
    		

    12+
    		

    TO-252(DPAK)
    		

    15000
    		

    全新原裝,絕對正品,公司現(xiàn)貨供應。
    		
詢價
    

    



    SR
    		

    23+
    		

    TO252
    		

    5000
    		

    原裝正品,假一罰十
    		
詢價
    

    



    CET
    		

    2016+
    		

    TO252
    		

    2500
    		

    只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
    		
詢價
    

            
    
        
    
        
    更多CEU供應商
            更新時間2026-1-22 9:19:00
        
    
        
    
          
    
            
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