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          首頁(yè) >CEU>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          CEU51A3

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 30V, 35A, RDS(ON) = 14m?(typ) @VGS = 10V. RDS(ON) = 21m?(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:143.62 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU540A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 25A, RDS(ON) = 49m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:171.75 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU540L

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 25A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. RDS(ON) = 53mW @VGS = 5V.

          文件:617.16 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEU540N

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 25A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

          文件:489.64 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEU540N

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:399.68 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU550

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 27A, RDS(ON) = 40mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

          文件:643.53 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEU55N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

          文件:645.15 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEU55N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

          文件:868.57 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEU55N15

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 150V, 55A, RDS(ON) = 17mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

          文件:514.179 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEU6026AL

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 65V, 115A, RDS(ON) = 2.7mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 3.8mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

          文件:439.93 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          技術(shù)參數(shù)

          • BVDSS(V):

            650

          • Rds(on)mΩ@10V:

            10500

          • ID(A):

            1.2

          • Qg(nC)@10V(typ):

            5.8

          • RθJC(℃/W):

            3.5

          • Pd(W):

            35.7

          • Configuration:

            Single

          • Polarity:

            N

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          CET
          23+
          TO252
          7000
          絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
          詢價(jià)
          CET
          25+
          SMD2
          2218
          ⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          詢價(jià)
          CET
          25+
          TO252
          103
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          CET
          13+
          5171
          原裝分銷
          詢價(jià)
          CET
          25+
          DIP-14
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          CET
          17+
          TO252
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          CET
          00+
          SMD2
          890
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          CET
          12+
          TO-252(DPAK)
          15000
          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          SR
          23+
          TO252
          5000
          原裝正品,假一罰十
          詢價(jià)
          CET
          2016+
          TO252
          2500
          只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
          詢價(jià)
          更多CEU供應(yīng)商 更新時(shí)間2026-1-21 10:51:00
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