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                >CEU>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          CEU3070
          N-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
■ 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V.
                    RDS(ON) = 13.5mΩ @VGS = 4.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
   
          文件：667.26 Kbytes 頁數(shù)：4 Pages
          CET
          華瑞
          

          CEU3080
          N-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
30V, 57A, RDS(ON) = 10m? @VGS = 10V.
RDS(ON) = 14m? @VGS = 4.5V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability
Lead free product is acquired.
TO-251 & TO-252 package.
          文件：117.42 Kbytes 頁數(shù)：4 Pages
          CET
          華瑞
          

          CEU30N08
          N-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
80V, 30A, RDS(ON) = 30mW @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
Lead-free plating ; RoHS compliant.
RDS(ON) = 38mW @VGS = 4.5V.
          文件：503.2 Kbytes 頁數(shù)：4 Pages
          CET-MOS
          華瑞
          

          CEU30P10
          P-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
-100V, -27A, RDS(ON) = 76mW @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
RoHS compliant.
RDS(ON) = 92mW @VGS = -4.5V.
          文件：788.27 Kbytes 頁數(shù)：4 Pages
          CET-MOS
          華瑞
          

          CEU30P10
          P-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V.
                        RDS(ON) = 92mΩ @VGS = -4.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
          文件：423.18 Kbytes 頁數(shù)：4 Pages
          CET
          華瑞
          

          CEU30P10A
          P-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
-100V, -29A, RDS(ON) = 55 mW @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
RoHS compliant.
Pb-free lead plating ; RoHS compliant.
Halogen Free.
RDS(ON) = 60 mW @VGS = -4.5V.

Switched mode
          文件：453.23 Kbytes 頁數(shù)：5 Pages
          CET-MOS
          華瑞
          

          CEU3100
          N-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
30V, 51A , RDS(ON) = 10mW @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-251 & TO-252 package.
RDS(ON) = 17mW @VGS = 4.5V.
RoHS compliant.
          文件：661.16 Kbytes 頁數(shù)：4 Pages
          CET-MOS
          華瑞
          

          CEU3100
          N-Channel Enhancement Mode Field Effect Transistor
          
FEATURES
■ 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V.
                     RDS(ON) = 17mΩ @VGS = 4.5V.
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handing capability.
■ Lead free product is acquired.
■ TO-251 & TO-252 package.
          文件：415.7 Kbytes 頁數(shù)：4 Pages
          CET
          華瑞
          

          CEU3100
          N-Channel MOSFET uses advanced trench technology
          
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=30V,ID=55A,RDS(ON)
          文件：1.27043 Mbytes 頁數(shù)：4 Pages
          DOINGTER
          杜因特
          

          CEU3109
          Dual Enhancement Mode Field Effect Transistor (N and P Channel)
          
FEATURES
30V , 22A , RDS(ON) = 12mW @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-252-4L package.
RDS(ON) = 20mW @VGS = 4.5V.
Lead-free plating ; RoHS compliant.
-30V , -18A , RDS(ON) = 20mW @VGS = 10V.
RDS(ON) = 30mW @VGS
          文件：841.4 Kbytes 頁數(shù)：7 Pages
          CET-MOS
          華瑞
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • BVDSS(V)：
            650
          • Rds(on)mΩ@10V：
            10500
          • ID(A)：
            1.2
          • Qg(nC)@10V(typ)：
            5.8
          • RθJC(℃/W)：
            3.5
          • Pd(W)：
            35.7
          • Configuration：
            Single
          • Polarity：
            N
          
            
          
        
          
            
          供應商型號品牌批號封裝庫存備注價格
          
                
          



          CET
          		

          23+
          		

          TO252
          		

          7000
          		

          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          		
詢價
          

          



          CET
          		

          25+
          		

          SMD2
          		

          2218
          		

          ⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
          		
詢價
          

          



          CET
          		

          25+
          		

          TO252
          		

          103
          		

          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          		
詢價
          

          



          CET
          		

          13+
          		

          		

          5171
          		

          原裝分銷
          		
詢價
          

          



          CET
          		

          25+
          		

          DIP-14
          		

          18000
          		

          原廠直接發(fā)貨進口原裝
          		
詢價
          

          



          CET
          		

          17+
          		

          TO252
          		

          6200
          		

          100%原裝正品現(xiàn)貨
          		
詢價
          

          



          CET
          		

          00+
          		

          SMD2
          		

          890
          		

          全新原裝100真實現(xiàn)貨供應
          		
詢價
          

          



          CET
          		

          12+
          		

          TO-252(DPAK)
          		

          15000
          		

          全新原裝,絕對正品,公司現(xiàn)貨供應。
          		
詢價
          

          



          SR
          		

          23+
          		

          TO252
          		

          5000
          		

          原裝正品,假一罰十
          		
詢價
          

          



          CET
          		

          2016+
          		

          TO252
          		

          2500
          		

          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          		
詢價
          

            
          
        
          
        
          更多CEU供應商
            更新時間2026-1-21 14:12:00
        
          
        
          
          
          
            
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