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          首頁 >BFP>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BFP620FH7764

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor* ? High gain low noise RF transistor ? Small package 1.4 x 0.8 x 0.59 mm ? Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz ? Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz ? Gold metal

          文件:154.82 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:272.86 Kbytes 頁數(shù):8 Pages

          INFINEON

          英飛凌

          BFP640

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640E6327

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP640F

          NPN Silicon Germanium RF Transistor

          Product Brief The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA

          文件:190.83 Kbytes 頁數(shù):6 Pages

          INFINEON

          英飛凌

          BFP640FESD

          Robust Low Noise Silicon Germanium Bipolar RF Transistor

          Product Brief The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA.

          文件:1.64277 Mbytes 頁數(shù):28 Pages

          INFINEON

          英飛凌

          BFP640H6327

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz ?

          文件:154.94 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          BFP650

          NPN Silicon Germanium RF Transistor

          NPN Silicon Germanium RF Transistor Preliminary data ? For high power amplifiers ? Ideal for low phase noise oscilators ? Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz ? Gold metallization for high reliability ? 70 GHz fT- Silicon Germanium technology.

          文件:191.16 Kbytes 頁數(shù):6 Pages

          INFINEON

          英飛凌

          BFP650

          NPN Silicon Germanium RF Transistor

          Product Brief The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 150 mA. With

          文件:209.79 Kbytes 頁數(shù):7 Pages

          INFINEON

          英飛凌

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            1.5SMBJ36CA

          • 制造商:

            Bourns Inc.

          • 類別:

            電路保護(hù) > TVS - 二極管

          • 系列:

            1.5SMBJ

          • 包裝:

            卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

          • 類型:

            齊納

          • 電壓 - 反向斷態(tài)(典型值):

            36V

          • 電壓 - 擊穿(最小值):

            40V

          • 不同 Ipp 時(shí)電壓 - 箝位(最大值):

            58.1V

          • 電流 - 峰值脈沖 (10/1000μs):

            25.9A

          • 功率 - 峰值脈沖:

            1500W(1.5kW)

          • 電源線路保護(hù):

          • 應(yīng)用:

            通用

          • 工作溫度:

            -55°C ~ 150°C(TJ)

          • 安裝類型:

            表面貼裝型

          • 封裝/外殼:

            DO-214AA,SMB

          • 供應(yīng)商器件封裝:

            SMB(DO-214AA)

          • 描述:

            DIO TVS VRWM 36V 1500W BIDIR SMB

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          24+
          N/A
          54000
          一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
          詢價(jià)
          BOURNS
          25+
          SMB(DO-214AA)
          18746
          樣件支持,可原廠排單訂貨!
          詢價(jià)
          Bourns
          25+
          N/A
          18798
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          BOURNS
          24+
          con
          35960
          查現(xiàn)貨到京北通宇商城
          詢價(jià)
          LITTEIFUSE
          2121+
          SMB
          360000
          上傳都是百分之百進(jìn)口原裝現(xiàn)貨
          詢價(jià)
          更多BFP供應(yīng)商 更新時(shí)間2026-1-19 11:06:00
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