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          首頁 >BFP>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BFP193W

          NPN Silicon RF Transistor

          NPN Silicon RF Transistor* ? For low noise, high-gain amplifiers up to 2 GHz ? For linear broadband amplifiers ? fT = 8 GHz, F = 1 dB at 900 MHz ? Pb-free (RoHS compliant) package1) ? Qualified according AEC Q101 * Short term description

          文件:75.36 Kbytes 頁數(shù):7 Pages

          INFINEON

          英飛凌

          BFP193W_14

          Low Noise Silicon Bipolar RF Transistor

          Low Noise Silicon Bipolar RF Transistor ? For low noise, high-gain amplifiers up to 2 GHz ? For linear broadband amplifiers ? fT = 8 GHz, NFmin = 1 dB at 900 MHz ? Pb-free (RoHS compliant) package ? Qualification report according to AEC-Q101 available

          文件:537.35 Kbytes 頁數(shù):6 Pages

          INFINEON

          英飛凌

          BFP194

          PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)

          PNP Silicon RF Transistor ● For low distortion broadband amplifier in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA

          文件:60.65 Kbytes 頁數(shù):7 Pages

          SIEMENS

          西門子

          BFP196

          NPN Silicon RF Transistor

          NPN Silicon RF Transistor* ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA ? Power amplifier for DECT and PCN systems ? fT = 7.5 GHz, F = 1.3 dB at 900 MHz ? Pb-free (RoHS comp

          文件:79.39 Kbytes 頁數(shù):7 Pages

          INFINEON

          英飛凌

          BFP196

          NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

          ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA ? Power amplifier for DECT and PCN systems ? fT = 7.5GHz F = 1.5 dB at 900MHz

          文件:60.94 Kbytes 頁數(shù):7 Pages

          SIEMENS

          西門子

          BFP196W

          NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

          NPN Silicon RF Transistor ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA ? Power amplifier for DECT and PCN systems ? fT = 7.5GHz F = 1.5 dB at 900MHz

          文件:60.52 Kbytes 頁數(shù):7 Pages

          SIEMENS

          西門子

          BFP196W

          NPN Silicon RF Transistor

          NPN Silicon RF Transistor* ? For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA ? Power amplifier for DECT and PCN systems ? fT = 7.5 GHz, F = 1.3 dB at 900 MHz ? Pb-free (RoHS comp

          文件:79.27 Kbytes 頁數(shù):7 Pages

          INFINEON

          英飛凌

          BFP196W

          isc Silicon NPN RF Transistor

          DESCRIPTION ? Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz ? High Gain ︱ S21︱ 2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use in low noise

          文件:281.25 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          BFP196WN

          Low noise silicon bipolar RF transistor

          Product description ? NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

          文件:644.65 Kbytes 頁數(shù):19 Pages

          INFINEON

          英飛凌

          BFP22

          NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)

          NPN Silicon Transistors with High Reverse Voltage ●High breakdown voltage ●Low collector-emitter saturation voltage ●Low capacitance ●Complementary types: BFP 23, BFP 26 (PNP)

          文件:171.3 Kbytes 頁數(shù):4 Pages

          SIEMENS

          西門子

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            1.5SMBJ36CA

          • 制造商:

            Bourns Inc.

          • 類別:

            電路保護 > TVS - 二極管

          • 系列:

            1.5SMBJ

          • 包裝:

            卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

          • 類型:

            齊納

          • 電壓 - 反向斷態(tài)(典型值):

            36V

          • 電壓 - 擊穿(最小值):

            40V

          • 不同 Ipp 時電壓 - 箝位(最大值):

            58.1V

          • 電流 - 峰值脈沖 (10/1000μs):

            25.9A

          • 功率 - 峰值脈沖:

            1500W(1.5kW)

          • 電源線路保護:

          • 應用:

            通用

          • 工作溫度:

            -55°C ~ 150°C(TJ)

          • 安裝類型:

            表面貼裝型

          • 封裝/外殼:

            DO-214AA,SMB

          • 供應商器件封裝:

            SMB(DO-214AA)

          • 描述:

            DIO TVS VRWM 36V 1500W BIDIR SMB

          供應商型號品牌批號封裝庫存備注價格
          24+
          N/A
          54000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          BOURNS
          25+
          SMB(DO-214AA)
          18746
          樣件支持,可原廠排單訂貨!
          詢價
          Bourns
          25+
          N/A
          18798
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          BOURNS
          24+
          con
          35960
          查現(xiàn)貨到京北通宇商城
          詢價
          LITTEIFUSE
          2121+
          SMB
          360000
          上傳都是百分之百進口原裝現(xiàn)貨
          詢價
          更多BFP供應商 更新時間2026-1-18 11:06:00
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