| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN Silicon RF Transistor Low Noise Silicon Bipolar RF Transistor ? For low current applications ? Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 22.5 dB at 1.8 GHz ? Transition frequency fT = 25 GHz ? Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) wit 文件：58.75 Kbytes 頁數(shù)：4 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon RF Transistor Low Noise Silicon Bipolar RF Transistor ? Low current device suitable e.g. for handhelds ? For high frequency oscillators e.g. DRO for LNB ? For ISM band applications like Automatic Meter Reading, Sensors etc. ? Transit frequency fT = 25 GHz ? Pb-free (RoHS compliant) and halogen-free pa 文件：551.66 Kbytes 頁數(shù)：8 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/ams/marking.html">AMs；Package：SOT-343；NPN Silicon RF Transistor Low Noise Silicon Bipolar RF Transistor ? For high gain and low noise amplifiers ? Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz ? For oscillators up to 10 GHz ? Transition frequency fT = 25 GHz ? Pb-free (RoHS compliant) and halogen-free package with visib 文件：74.44 Kbytes 頁數(shù)：7 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) NPN Silicon RF Transistor ? For high gain low noise amplifiers ? For oscillators up to 10 GHz ? Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz ? Transition frequency fT = 25 GHz ? Gold metalization for high reliability ? SIEGET? 25 - Line Siemens Grounded Emitter 文件：50.27 Kbytes 頁數(shù)：8 Pages | SIEMENS 西門子 | SIEMENS | ||
NPN Silicon RF Transistor NPN Silicon RF Transistor ? For high gain low noise amplifiers ? For oscillators up to 10 GHz ? Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz ? Transition frequency fT = 25 GHz ? Gold metallization for high reliability ? SIEGET ? 25 GHz fT - Line ? Pb-free (RoHS 文件：542.63 Kbytes 頁數(shù)：9 Pages | INFINEON 英飛凌 | INFINEON | ||
NPN Silicon RF Transistor Product Brief The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 60 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition 文件：49.77 Kbytes 頁數(shù)：4 Pages | INFINEON 英飛凌 | INFINEON | ||
For high gain low noise amplifiers NPN Silicon RF Transistor ? For high gain low noise amplifiers ? For oscillators up to 10 GHz ? Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz ? Transition frequency fT = 25 GHz ? Gold metallization for high reliability ? SIEGET ? 25 GHz fT - Line ? Pb-free (RoHS 文件：542.63 Kbytes 頁數(shù)：9 Pages | INFINEON 英飛凌 | INFINEON | ||
isc Silicon NPN RF Transistor DESCRIPTION ? High Power Gain ? High Current Gain Bandwidth Product ? Low Noise Figure ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use in RF wideband amplifiers and oscillators. 文件：245.03 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
NPN Silicon RF Transistor (For medium power amplifiers) NPN Silicon RF Transistor ? For medium power amplifiers ? Compression point P-1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz ? Transition frequency fT = 24 GHz ? Gold metalization for high reliability ? SIEGET ? 25 - Line 文件：49.87 Kbytes 頁數(shù)：8 Pages | SIEMENS 西門子 | SIEMENS | ||
絲?。?a target="_blank" title="Marking" href="/ans/marking.html">ANs；Package：SOT-343；NPN Silicon RF Transistor Product Brief The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequ 文件：74.55 Kbytes 頁數(shù)：7 Pages | INFINEON 英飛凌 | INFINEON |
產(chǎn)品屬性
- 產(chǎn)品編號：
1.5SMBJ36CA
- 制造商：
Bourns Inc.
- 類別：
電路保護 > TVS - 二極管
- 系列：
1.5SMBJ
- 包裝：
卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶
- 類型：
齊納
- 電壓 - 反向斷態(tài)（典型值）：
36V
- 電壓 - 擊穿（最小值）：
40V
- 不同 Ipp 時電壓 - 箝位（最大值）：
58.1V
- 電流 - 峰值脈沖 (10/1000μs)：
25.9A
- 功率 - 峰值脈沖：
1500W（1.5kW）
- 電源線路保護：
無
- 應用：
通用
- 工作溫度：
-55°C ~ 150°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
DO-214AA，SMB
- 供應商器件封裝：
SMB（DO-214AA）
- 描述：
DIO TVS VRWM 36V 1500W BIDIR SMB
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
54000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
BOURNS |
25+ |
SMB(DO-214AA) |
18746 |
樣件支持,可原廠排單訂貨! |
詢價 | ||
Bourns |
25+ |
N/A |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
BOURNS |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
LITTEIFUSE |
2121+ |
SMB |
360000 |
上傳都是百分之百進口原裝現(xiàn)貨 |
詢價 |
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